Cite this article:
Yu Zhi-Qiang, Xu Zhi-Mou, Wu Xing-Hui. Electronic structure and optical properties of MgxZn1-xS bulk crystal using first-principles calculationsJ. Chin. Phys. B, 2014, 23(10): 107102.
| Yu Zhi-Qiang, Xu Zhi-Mou, Wu Xing-Hui. Electronic structure and optical properties of MgxZn1-xS bulk crystal using first-principles calculationsJ. Chin. Phys. B, 2014, 23(10): 107102. |
Electronic structure and optical properties of MgxZn1-xS bulk crystal using first-principles calculations
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Abstract
We perform the first-principles calculations within the framework of density functional theory to determine the electronic structure and optical properties of MgxZn1-xS bulk crystal. The results indicate that the electronic structure and optical properties of MgxZn1-xS bulk crystal are sensitive to the Mg impurity composition. In particular, the MgxZn1-xS bulk crystal displays a direct band structure and the band gap increases from 2.05 eV to 2.91 eV with Mg dopant composition value x increasing from 0 to 0.024. The S 3p electrons dominate the top of valence band, while the Zn 4s electrons and Zn 3p electrons occupy the bottom of conduction band in MgxZn1-xS bulk crystal. Moreover, the dielectric constant decreases and the optical absorption peak obviously has a blue shift. The calculated results provide important theoretical guidance for the applications of MgxZn1-xS bulk crystal in optical detectors. -
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