Numerical simulation of a triple-junction thin-film solar cell based on μc-Si_1-xGe_x：H

In this paper, a-Si:H/a-SiGe:H/μc-SiGe:H triple-junction solar cell structure is proposed. By the analyses of microelectronic and photonic structures (AMPS-1D) and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction (TRJ) model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si:H/a-SiGe:H/μc-SiGe:H triple cell with an initial efficiency of 12.09% (V_oc=2.03 V, FF=0.69, J_sc=8.63 mA/cm², area=1 cm²) is achieved in our laboratory.