Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated by using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows the improved light output power, lower current leakage, and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to alleviation of the electrostatic field in the active region.