The voltage current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships (VCRs) between two parallel memristive circuits, i.e., parallel memristor and capacitor circuit (called as parallel MC circuit), and parallel memristor and inductor circuit (called as parallel ML circuit), are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. Equivalent circuit model of the memristor is built, upon which the circuit simulations and experimental measurements of both parallel MC circuit and parallel ML circuit are performed, of which the results verify the theoretical analysis results.