Cite this article:
Ye Xiao-Qiu, Luo De-Li, Sang Ge, Ao Bing-Yun. Electronic structures and thermodynamic stabilities of aluminum-based deuterides from first principles calculationsJ. Chin. Phys. B, 2011, 20(1): 017102.
| Ye Xiao-Qiu, Luo De-Li, Sang Ge, Ao Bing-Yun. Electronic structures and thermodynamic stabilities of aluminum-based deuterides from first principles calculationsJ. Chin. Phys. B, 2011, 20(1): 017102. |
Electronic structures and thermodynamic stabilities of aluminum-based deuterides from first principles calculations
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Abstract
The alanates (complex aluminohydrides) have relatively high gravimetric hydrogen densities and are among the most promising solid-state hydrogen-storage materials. In this work, the electronic structures and the formation enthalpies of seven typical aluminum-based deuterides have been calculated by the plane-wave pseudopotential method, these being AlD3, LiAlD4, Li3AlD6, BaAlD5, Ba2AlD7, LiMg(AlD4)3 and LiMgAlD6. The results show that all these compounds are large band gap insulators at 0 K with estimated band gaps from 2.31 eV in AlD3 to 4.96 eV in LiMg(AlD4)3. The band gaps are reduced when the coordination of Al varies from 4 to 6. Two peaks present in the valence bands are the common characteristics of aluminum-based deuterides containing AlD4 subunits while three peaks are the common characteristics of those containing AlD6 subunits. The electronic structures of these compounds are determined mainly by aluminum deuteride complexes (AlD4 or AlD6) and their mutual interactions. The predicted formation enthalpies are presented for the studied aluminum-based deuterides. -
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