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    Cao Jin, Hong Fei, Xing Fei-Fei, Gu Wen, Guo Xin-An, Zhang Hao, Wei Bin, Zhang Jian-Hua, Wang Jun. High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modificationJ. Chin. Phys. B, 2010, 19(3): 037106.
    Cao Jin, Hong Fei, Xing Fei-Fei, Gu Wen, Guo Xin-An, Zhang Hao, Wei Bin, Zhang Jian-Hua, Wang Jun. High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modificationJ. Chin. Phys. B, 2010, 19(3): 037106.
  • High-performance n-channel organic thin-film transistors based on the dual effects of heterojunction and surface modification

    • This paper presents two n-channel organic heterojunction transistors with modified insulator by using hexadecafluorophthalocyaninatocopper (F16CuPc)/copper phthalocyanine (CuPc) and F16CuPc/pentacene as the active layers. Compared with a single-layer device, it reports that an improved field-effect mobility and a 6-fold higher drain current are observed. The highest mobility of 0.081 cm2/(V.s) was obtained from F16CuPc/CuPc heterojunction devices. This result is attributed to the dual effects of the organic heterojunction and interface modification. Furthermore, for two heterojunction devices, the performance of the F16CuPc/CuPc-based transistor is better than that of F16CuPc/pentacene. This is attributed to the morphologic match of two organic components.
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