Cite this article:
Li Ping, Deng Sheng-Hua, Zhang Li, Yu Jiang-Ying, Liu Guo-Hong. Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: a first-principle studyJ. Chin. Phys. B, 2010, 19(11): 117102.
| Li Ping, Deng Sheng-Hua, Zhang Li, Yu Jiang-Ying, Liu Guo-Hong. Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: a first-principle studyJ. Chin. Phys. B, 2010, 19(11): 117102. |
Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: a first-principle study
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Abstract
The electronic structures and effective masses of the N mono-doped and Al–N, Ga–N, In–N codoped ZnO system have been calculated by a first-principle method, and comparisons among different doping cases are made. According to the results, the impurity states in the codoping cases are more delocalised compared to the N mono-doping case, which means a better conductive behaviour can be obtained by codoping. Besides, compared to the Al–N and Ga–N codoping cases, the hole effective mass of In–N codoped system is much smaller, indicating the p-type conductivity can be more enhanced by In–N codoping. -
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