Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-\kappa organic dielectric

The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-\kappa organic dielectrics are investigated. The maximum drain current I_{D max} and the maximum transconductance g_{m max} of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V_T and g_{m max} of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-\kappa organic dielectric.