Cite this article:
Xu Jia-Xin, Feng Yan-Yan, Sun Gui-Juan, Dai Zhen-Wen. Radiative lifetime measurements of odd-parity high-excited levels of Sn I by time-resolved laser spectroscopyJ. Chin. Phys. B, 2009, 18(9): 3828-3832.
| Xu Jia-Xin, Feng Yan-Yan, Sun Gui-Juan, Dai Zhen-Wen. Radiative lifetime measurements of odd-parity high-excited levels of Sn I by time-resolved laser spectroscopyJ. Chin. Phys. B, 2009, 18(9): 3828-3832. |
Radiative lifetime measurements of odd-parity high-excited levels of Sn I by time-resolved laser spectroscopy
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Abstract
Natural radiative lifetimes of five higher-lying odd-parity levels 5p7s 3P1o, 5p5d 1P1o, 5p6d 3F2o, 3D1o and 3F3o in neutral tin are measured by the time-resolved laser-induced fluorescence (TR-LIF) technique and the atomic beam method. All these lifetimes are not longer than 100 ns and they are found to be shorter than the lifetimes of even-parity levels in the same energy region. The results reported in this paper provide important transition parameters for highly-excited atomic Sn, which may be useful for theoretically calculating excited heavy atoms. -
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