Micromagnetic simulation for high field sensors with perpendicular magnetizations

In this paper, we present a micromagnetic design for high field sensors. The hard layer of the sensors is L1_0--FePt which is magnetized perpendicularly to film plane and the sense layer is NiFe which is magnetized in the film plane. The magnetization configurations of the hard and sense layers at different external magnetic fields have been simulated. In micromagnetic simulation, the sense field up to one tesla can be reached by using this sensor. We find that whether the sensor has a symmetric or an asymmetric field-sensing window is determined by the coercive field of the hard layer and the demagnetizing field of the sense layer.