MMIC LNA based novel composite-channel Al_0.3Ga_0.7N/Al_0.05Ga _0.95N/GaN HEMTs

A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1 \mu m-gate composite-channel Al_0.3Ga_0.7N/Al_0.05Ga_0.95N/GaN high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of --6 dB and an output return loss of --16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 \mu m \times 100 \mu m device showed very high-dynamic range with decent gain and noise figure.