Cite this article:
Yao Zhi-Gang, Zhang Xi-Qing, Shang Hong-Kai, Teng Xiao-Ying, Wang Yong-Sheng, Huang Shi-Hua. Lasing action of high quality ZnO thin film deposited by radio-frequency magnetron sputteringJ. Chin. Phys. B, 2005, 14(6): 1205-1208.
| Yao Zhi-Gang, Zhang Xi-Qing, Shang Hong-Kai, Teng Xiao-Ying, Wang Yong-Sheng, Huang Shi-Hua. Lasing action of high quality ZnO thin film deposited by radio-frequency magnetron sputteringJ. Chin. Phys. B, 2005, 14(6): 1205-1208. |
Lasing action of high quality ZnO thin film deposited by radio-frequency magnetron sputtering
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Abstract
ZnO thin films are deposited on SiO2 substrates by radio-frequency magnetron sputtering. A and B excitons are observed from the absorption spectra at room temperature. A, B and C excitons are observed from the reflectance spectra at 19 K. These results indicate that the obtained ZnO films have a good wurtzite structure. We obtain the stimulated emission resulting from electron-hole plasma. The lasing spectrum is observed, which consist of a large number of narrow peaks with an around 0.5 nm spacing in between, corresponding to a self-formed cavity length of around 31.5 μm. The self-formation of laser cavity in the ZnO thin film is closed related to its the hexagon structure. -
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