Cite this article:
Chi Ming-jun, Dou Shuo-xing, Ye Pei-xian. THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALSJ. Chin. Phys. B, 1999, 8(9): 664-669.
| Chi Ming-jun, Dou Shuo-xing, Ye Pei-xian. THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALSJ. Chin. Phys. B, 1999, 8(9): 664-669. |
THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALS
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Abstract
Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SD\gammaT/ST\gammaD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SD\gammaT/ST\gammaD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures. -
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