Print ISSN:1674-1056  |  Online ISSN:2058-3834  |  CN:11-5639/O4
  • Cite this article:

    Chi Ming-jun, Dou Shuo-xing, Ye Pei-xian. THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALSJ. Chin. Phys. B, 1999, 8(9): 664-669.
    Chi Ming-jun, Dou Shuo-xing, Ye Pei-xian. THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALSJ. Chin. Phys. B, 1999, 8(9): 664-669.
  • THEORETICAL STUDY OF THE INTENSITY DEPENDENCE OF TOTAL EFFECTIVE TRAP DENSITY IN PHOTOREFRACTIVE CRYSTALS

    • Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SD\gammaT/ST\gammaD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SD\gammaT/ST\gammaD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.
    • Article Text

    • loading

    Catalog

      /

      DownLoad:  Full-Size Img  PowerPoint
      Return
      Return