Cite this article:
Liu Shi-an, Lin Shi-ming, Wang Qi-ming. RADIATION OF DRESSED EXCITONS IN THE SEMICONDUCTOR MICROCAVITYJ. Chin. Phys. B, 1999, 8(7): 514-520.
| Liu Shi-an, Lin Shi-ming, Wang Qi-ming. RADIATION OF DRESSED EXCITONS IN THE SEMICONDUCTOR MICROCAVITYJ. Chin. Phys. B, 1999, 8(7): 514-520. |
RADIATION OF DRESSED EXCITONS IN THE SEMICONDUCTOR MICROCAVITY
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Abstract
In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multi-particle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough. -
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