Cite this article:
WANG JUN-ZHONG, LI BO-ZANG, GAO JUN-SHAN. CONTRIBUTION FROM MOLDCULAR FIELD TO THE TEMPERATURE DEPENDENCE OF TUNNELING MAGNETORESISTANCEJ. Chin. Phys. B, 1999, 8(12): 919-926.
| WANG JUN-ZHONG, LI BO-ZANG, GAO JUN-SHAN. CONTRIBUTION FROM MOLDCULAR FIELD TO THE TEMPERATURE DEPENDENCE OF TUNNELING MAGNETORESISTANCEJ. Chin. Phys. B, 1999, 8(12): 919-926. |
CONTRIBUTION FROM MOLDCULAR FIELD TO THE TEMPERATURE DEPENDENCE OF TUNNELING MAGNETORESISTANCE
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Abstract
Based on the nearly free-electron approximation, we have investigaed the temperature (T) dependence of spin-polarized tunneling in the magnetic tunnel junction with an asymmetrical barrier, with emphasis on the variation of molecular field with T in the same way as that of surface magnetization. It is found that the Slonczewski model can describe well the T depen-dence of spin-polarized tunneling, while the Julliere model only describes the T dependence of JMR qualitatively, but does accurately that of the difference of tunneling conductance between the parallel and antiparallal alignments for the magnetizations of FMs; Differing from the pre-vious finding, we find the electron spin polarization is not strictly proportional to the surface magnetization, for the former decreases with the increasing T more rapidly than the latter does. -
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