INFLUENCE OF INTERFACE KINETICS ON THE RELAXATION BEHAVIOR IN SOLUTION SYSTEM FOR CRYSTAL GROWTH UNDER MICROGRAVITY

The influence of the interface kinetics at the growth face of a crystal and at the surface of material of solute source on the relaxation behavior in a solution system for crystal growth under microgravity is studied. Because the variation of the solution density caused by the solute concentration change can be omitted and only that caused by the temperature change is taken into account, the interface kinetics does not influence the relaxation behaviors of the fluid velocity and the temperature distribution index S_\theta (see text). The relaxations of the concentration distribution index S_\phi (see text) and dimensionless average growth rate of crystal \barV_\rm cg are calculated under the square pulsed fluctuations of the gravity level or the temperature at the growth face of crystal. Introduction of the interface kinetics makes the value of S_\phi enlarged and the perturbation peak of the S_\phi -\tau curve caused by the gravity level or temperature fluctuation lowered. While the perturbation peak and the valley of the \barV_\rm cg-\tau curve caused by the negatively and positively pulsed temperature fluctuation, respectively, is lowered and shallowed by the interface kinetics.