PASSIVATION OF THE InP(100) SURFACE USING (NH₄)₂S_x

InP(100) surface treated with (NH₄)₂S_x has been investigated by using photolumines-cence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy, It is found that PL intensity increased by a factor of 3.3 after (NH₄)₂S_x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.