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    MAO HUI-BING, LU WEI, SHEN XUE-CHU. STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXYJ. Chin. Phys. B, 1995, 4(10): 757-765.
    MAO HUI-BING, LU WEI, SHEN XUE-CHU. STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXYJ. Chin. Phys. B, 1995, 4(10): 757-765.
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    • STUDY OF THE MECHANISM OF GaAs(001) MOLECULAR-BEAM EPITAXY

      Abstract
    • In this paper the nucleation and growth processes of GaAs(001) molecular-beam epitaxy were studied by Monte Carlo simulation, The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures, and the island size distribution at low coverage, as well as the correlation function between atoms and its relation with the temperature were studied in detail.
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