ELECTRICAL RESISTIVITY OF NANOCRYSTALLINE Fe-Cu-Si-B ALLOYS

We have studied the room temperature and low-temperature electrical resistivities of nanocrystalline Fe-Cu-Si-B alloys with various grain sizes prepared by crystallization of amor-phous material. Experimental results showed that with the reduction of grain size both room temperature resistivity \rho_RT and residual reaistivity \rho₀ of the nanostructured alloys studied increased significantly. Based on the scattering effects from interfaces and lattice distortion, the above results were qualitatively discussed.