POSITRON ANNIHILATION WITH VACANCIES IN THIN SURFACE LAYER OF As HEAVILY DOPED Si

The lifetime spectroscopy of slow positron accelerated with linear accelerator and pulse punch system was first used to analyze the vacancies in the thin surface layer of silicon heavily doped with arsenic. The results demonstrated that no mono-vacancy was detected to support the arsenic-vacancy complex models for explaining the electrical deactivation mechanism of arsenic-heavily-doped silicon.