A STUDY ON SECONDARY DEFECTS IN SELF-ION IMPLANTED Si

By using the cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (and channeling) spectrometry (RBS) and high-energy electron beam irra-diation technology with a high voltage electron microscope (HVEM), secondary defects in self-ion implanted Si has been studied. The result shows that the depths of secondary de-fect bands are related to the implantation energies, and the values of depths are slightly greater than the projected ranges of self-ions implanted into Si. In the higher energy region (>1MeV), the former exceeds the latter by nearly 0.2-0.4μm. Experiments indicate that the pre-implantation damage (the primary defect), on one hand, will superpose on the primary defects of post-implantations and make secondary defects increase, and on the other hand, it will also provide an enhanced-diffusion region for vacancies and interstitials created by the post-implantation and reduce the formation of secondary defects. Experiments also show that dislocation loops in secondary defect bands of self-implanted Si are interstitial in nature.