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    Zhang Qi-feng, Shao Qing-yi, Hou Shi-min, Zhang Geng-min, Liu Wei-min, Xue Zeng-quan, Wu Jin-lei, Wang Shu-feng, Liang Rui-sheng, Huang Wen-tao, Wang Dan-ling, Gong Qi-huang. LARGE AND EXTREMELY FAST THIRD-ORDER NON-LINEARITY OF Ag NANOPARTICLES EMBEDDED INTO A CsxO SEMICONDUCTOR MATRIXJ. Chin. Phys. B, 2001, 10(13): 65-69.
    Zhang Qi-feng, Shao Qing-yi, Hou Shi-min, Zhang Geng-min, Liu Wei-min, Xue Zeng-quan, Wu Jin-lei, Wang Shu-feng, Liang Rui-sheng, Huang Wen-tao, Wang Dan-ling, Gong Qi-huang. LARGE AND EXTREMELY FAST THIRD-ORDER NON-LINEARITY OF Ag NANOPARTICLES EMBEDDED INTO A CsxO SEMICONDUCTOR MATRIXJ. Chin. Phys. B, 2001, 10(13): 65-69.
  • LARGE AND EXTREMELY FAST THIRD-ORDER NON-LINEARITY OF Ag NANOPARTICLES EMBEDDED INTO A CsxO SEMICONDUCTOR MATRIX

    • The third-order optical nonlinearity of Ag-O-Cs thin films, where Ag nanoparticles are embedded into a CsxO semiconductor matrix, was measured by the femtosecond optical Kerr technique. The third-order nonlinear optical susceptibility, \chi(3), of the thin films was estimated to be 1.1×10-9 esu at the incident wavelength of 820 nm. The response time, i.e. the full width at half-maximum of the Kerr signal, is as fast as 114 fs only. The intrinsic third-order optical nonlinearity can be attributed to the intraband transition of electrons from the occupied state near the Fermi level to the unoccupied state. It is suggested that such a nonlinearity is further enhanced by the local field effect that is present in the metallic nanoparticles composite thin films.
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