Cite this article:
Zhang Ze, S.T.Lee. ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLESJ. Chin. Phys. B, 2001, 10(13): 111-116.
| Zhang Ze, S.T.Lee. ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLESJ. Chin. Phys. B, 2001, 10(13): 111-116. |
ON THE STUDY OF SILICON NANO-WIRES SELF-ASSEMBLED AS PARTICLES
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Abstract
Two different types of Silicon nano-wires (SiNWs) have been observed by scanning and transmission electron microscopy. One are of free standing SiNWs deposited uniformly on the surface of silicon substrates, and the other are self-assembled into special shaped particles. These SiNWs were synthesized by thermal evaporation of SiO amorphous powders without any metal catalysts in the temperature range of 900-1250℃. Growth history reveals that the self-assembled SiNWs are formed by original nucleation from the surface of amorphous SiOx particle matrices through phase separation and silicon precipitation followed by further growth through oxide-assisted vapor-solid reactions. The above results provide a solid experimental support for the oxide-assisted growth model of SiNWs. -
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