SINGLE-ELECTRON TRANSISTORS FOR FUTURE APPLICATIONS

Single electron transistors with wire channels are fabricated by a nanoelectrode-pair technique. Their characteristics strongly depend on the channel widths and the voltages on the in-plane gates. A few dips in the Coulomb blockade oscillations were observed at the less positive gate voltages for a device with a 70nm-wide wire due to Coulomb blockade between the coupled dots. By applying negative voltages to the in-plane gates, the oscillations became periodic, which indicated the formation of a single dot in the conducting channel. These gates facilitate fabricating single-electron transistors with single dot structures, which have potential applications on its integration.