Effect of heavy ion radiation on TDDB properties and lifetime prediction of high-k dielectric layers

This study investigates the effect of heavy ion radiation on the time-dependent dielectric breakdown (TDDB) behavior of high-k dielectric layers. By testing and comparing parameters such as breakdown voltage, breakdown time, charge quantity, and dielectric layer lifetime before and after irradiation, and analyzing the underlying micromechanisms, the effect of heavy ion radiation on dielectric layer reliability is revealed. The results show that heavy ion radiation can induce defects in the dielectric layer. These defects play an important role in TDDB evolution, promote the formation of conductive paths, accelerate charge transport and defect accumulation, and ultimately degrade the breakdown time, charge quantity, and lifetime. Additionally, larger dielectric layer areas facilitate the formation of conductive paths, further exacerbating reliability degradation. This study provides a theoretical basis for optimizing device reliability in radiation environments.