Visible transparent β-Ga₂O₃ solar-blind UV high-performance photodetector for stable high-temperature operation

Transparent ultraviolet (UV) photodetectors have garnered significant interest due to their promising applications in integrated transparent electronics. In this work, a visible transparent solar-blind ultraviolet photodetector with stable crystalline ITO electrodes based on a β-Ga₂O₃ film has been fabricated and characterized from room temperature to 400 °C. The results demonstrate that the device maintains excellent thermal stability even at high temperatures up to 400 °C and achieves outstanding performance metrics, including a low dark current of 7.5 pA, a superb UV/visible rejection ratio of 7.8 × 10⁵, and a large detectivity of 1.3 × 10¹⁵ Jones. This overall performance surpasses that of most other reported Ga₂O₃-based transparent UV photodetectors. Therefore, the fabricated high-performance transparent β-Ga₂O₃ solar-blind UV photodetector demonstrates considerable potential for applications in advanced transparent electronics under extreme environments.