Tuning oxygen vacancies and realizing self-compliance resistive switching in a WO_x memristor

Tungsten oxide (WO_x) has attracted widespread attention as a new type of memory functional material with development and application prospects in industry. However, research into the effect of electrodes on the properties of WO_x-based switching memories remains insufficient. Here, non-crystalline WO_x-based switching memories were prepared with four electrodes (Ti, Al, TiN and W), and all the devices displayed nonvolatile resistive switching (RS) behavior. Notably, the W/WO_x/Pt structure of the memristor still has excellent performance without compliance current, including high retention characteristics, a wide ON/OFF window, ultra-low set/reset voltages and a fast response time. In addition, a physical model is given to further explain the electrode modulation of oxygen vacancy conducting filaments. This study provides a strategy for optimizing the electrodes to tune the carrier transport mechanism and RS behavior of WO_x-based devices, which offers ideas for realizing highly stable self-compliance in current digital storage.