Strain-engineered anisotropic conductance enhancement in corrugated monolayer MoS₂

To enhance the transport properties of monolayer MoS₂ (ML-MoS₂)-based electronic devices, we systematically investigate the curvature-dependent electronic structure and carrier mobility in a corrugated ML-MoS₂ using density functional theory and the non-equilibrium Green’s function method. We reveal that localized strain induces a polarized electric field, which modifies the band structure and delocalizes the electronic states, thereby significantly improving charge transport efficiency. The conductance along the zigzag direction exhibits 10⁷-fold enhancement with increasing curvature. At a maximum local strain of 10%, the electronic mobility reaches 613.68 cm²⋅V⁻¹⋅s⁻¹, representing a 9.1-fold improvement over planar ML-MoS₂. Our results agree well with available evidence and provide crucial insights for designing high-performance devices via strain engineering.