Advancing III–phosphide red light-emitting diode performance through ternary and graded ternary electron blocking layer

Gallium indium phosphide (GaInP)/aluminum gallium indium phosphide (AlGaInP) red-emitting active region has been numerically employed and investigated in III–V light-emitting diodes (LEDs) in this work. We have employed ternary aluminum gallium phosphide (AlGaP) electron blocking layer (EBL) and graded AlGaP EBL (or GEBL) separately in the red-emitting LED. According to the simulation results, improvements in internal quantum efficiency (IQE), radiative recombination rate (R_rad), and carrier concentrations have been observed. Up to 9% decrease in efficiency droop is observed in red-emitting LEDs with ternary EBLs. Good carrier confinement has resulted in high R_rad and, thus, increased optical output. The proposed EBLs may, thus, be adopted due to their high optical output in red-emitting LEDs, particularly for high current applications.