Pressure-induced amorphization and metallization in orthorhombic SiP

Amorphous states of two-dimensional (2D) materials frequently exhibit remarkable physical properties that differ significantly from their crystalline counterparts. Typically, metastable amorphous states can be achieved through rapid quenching from high temperatures. However, the heating process is detrimental to the structural integrity of 2D materials. In this study, we successfully utilized pressure as an external stimulus to induce an amorphous state in layered crystal SiP. Comprehensive experimental and theoretical investigations revealed metallization in the high-pressure amorphous phase of SiP. The recovered samples were characterized using x-ray diffraction, Raman spectroscopy, high-resolution transmission electron microscopy, and selected area electron diffraction. The results indicate that the metallic amorphous SiP obtained under extreme conditions can be stabilized at ambient conditions. These findings provide a viable pathway for inducing metastable phases in 2D materials and offer new insights into the design and development of advanced electronic devices.