Cite this article:
Zhi-Fu Duan, Chang-Hao Ding, Zhong-Ke Ding, Wei-Hua Xiao, Fang Xie, Nan-Nan Luo, Jiang Zeng, Li-Ming Tang, Ke-Qiu Chen. GaInX3 (X = S, Se, Te): Ultra-low thermal conductivity and excellent thermoelectric performanceJ. Chin. Phys. B, 2024, 33(8): 087302.
| Zhi-Fu Duan, Chang-Hao Ding, Zhong-Ke Ding, Wei-Hua Xiao, Fang Xie, Nan-Nan Luo, Jiang Zeng, Li-Ming Tang, Ke-Qiu Chen. GaInX3 (X = S, Se, Te): Ultra-low thermal conductivity and excellent thermoelectric performanceJ. Chin. Phys. B, 2024, 33(8): 087302. |
GaInX3 (X = S, Se, Te): Ultra-low thermal conductivity and excellent thermoelectric performance
-
Abstract
Seeking intrinsically low thermal conductivity materials is a viable strategy in the pursuit of high-performance thermoelectric materials. Here, by using first-principles calculations and semiclassical Boltzmann transport theory, we systemically investigate the carrier transport and thermoelectric properties of monolayer Janus GaInX3 (X = S, Se, Te). It is found that the lattice thermal conductivities can reach values as low as 3.07 W⋅m−1⋅K−1, 1.16 W⋅m−1⋅K−1 and 0.57 W⋅m−1⋅K−1 for GaInS3, GaInSe3, and GaInTe3, respectively, at room temperature. This notably low thermal conductivity is attributed to strong acoustic-optical phonon coupling caused by the presence of low-frequency optical phonons in GaInX3 materials. Furthermore, by integrating the characteristics of electronic and thermal transport, the dimensionless figure of merit ZT can reach maximum values of 0.95, 2.37, and 3.00 for GaInS3, GaInSe3, and GaInTe3, respectively. Our results suggest that monolayer Janus GaInX3 (X = S, Se, Te) is a promising candidate for thermoelectric and heat management applications. -
DownLoad: