Cite this article:
Ping Li, Bang Liu, Shuai Chen, Wei-Xi Zhang, Zhi-Xin Guo. Progress on two-dimensional ferrovalley materialsJ. Chin. Phys. B, 2024, 33(1): 017505.
| Ping Li, Bang Liu, Shuai Chen, Wei-Xi Zhang, Zhi-Xin Guo. Progress on two-dimensional ferrovalley materialsJ. Chin. Phys. B, 2024, 33(1): 017505. |
Progress on two-dimensional ferrovalley materials
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Abstract
The electron’s charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research interest. The intrinsic spontaneous valley polarization in two-dimensional magnetic systems, ferrovalley material, provides convenience for detecting and modulating the valley. In this review, we first introduce the development of valleytronics. Then, the valley polarization forms by the p-, d-, and f-orbit that are discussed. Following, we discuss the investigation progress of modulating the valley polarization of two-dimensional ferrovalley materials by multiple physical fields, such as electric, stacking mode, strain, and interface. Finally, we look forward to the future developments of valleytronics. -
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