Cite this article:
Changfeng Han, Ruoxi Qian, Chaoyu Xiang, Lei Qian. Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applicationsJ. Chin. Phys. B, 2023, 32(12): 128506.
| Changfeng Han, Ruoxi Qian, Chaoyu Xiang, Lei Qian. Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applicationsJ. Chin. Phys. B, 2023, 32(12): 128506. |
Materials and device engineering to achieve high-performance quantum dots light emitting diodes for display applications
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Abstract
Quantum dots (QDs) have attracted wide attention from academia and industry because of their advantages such as high emitting efficiency, narrow half-peak width, and continuously adjustable emitting wavelength. QDs light emitting diodes (QLEDs) are expected to become the next generation commercial display technology. This paper reviews the progress of QLED from physical mechanism, materials, to device engineering. The strategies to improve QLED performance from the perspectives of quantum dot materials and device structures are summarized. -
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