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  • Cite this article:

    Ke He. Molecular beam epitaxy growth of quantum devicesJ. Chin. Phys. B, 2022, 31(12): 126804.
    Ke He. Molecular beam epitaxy growth of quantum devicesJ. Chin. Phys. B, 2022, 31(12): 126804.
  • Molecular beam epitaxy growth of quantum devices

    • The inherent fragility and surface/interface-sensitivity of quantum devices demand fabrication techniques under very clean environment. Here, I briefly introduces several techniques based on molecular beam epitaxy growth on pre-patterned substrates which enable us to directly prepare in-plane nanostructures and heterostructures in ultrahigh vacuum. The molecular beam epitaxy-based fabrication techniques are especially useful in constructing the high-quality devices and circuits for solid-state quantum computing in a scalable way.
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