Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

The single event effect of a silicon–germanium heterojunction bipolar transistor (SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser. With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied. Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.