Combined effects of cycling endurance and total ionizing dose on floating gate memory cells

The combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, and the obtained results are listed below. (i) The programmed flash cells with a prior appropriate number of program and easing cycling stress exhibit much smaller threshold voltage shift than without those in response to radiation, which is ascribed mainly to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate. (ii) The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in the programmed state or erased state. (iii) Radiation is more likely to set up the interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.