Cite this article:
Yu Zhang, Hongjun Xu, Jiafeng Feng, Hao Wu, Guoqiang Yu, Xiufeng Han. Magnetic two-dimensional van der Waals materials forspintronic devicesJ. Chin. Phys. B, 2021, 30(11): 118504.
| Yu Zhang, Hongjun Xu, Jiafeng Feng, Hao Wu, Guoqiang Yu, Xiufeng Han. Magnetic two-dimensional van der Waals materials forspintronic devicesJ. Chin. Phys. B, 2021, 30(11): 118504. |
Magnetic two-dimensional van der Waals materials forspintronic devices
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Abstract
Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials. -
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