Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

Lateral β-Ga₂O₃ Schottky barrier diodes (SBDs) each are fabricated on an unintentionally doped (-201) n-type β-Ga₂O₃ single crystal substrate by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channel, the SBD demonstrates a high current density of 223 mA/mm and low specific on-resistance of 4.7 mΩ ·cm². Temperature-dependent performance is studied and the Schottky barrier height is extracted to be in a range between 1.3 eV and 1.35 eV at temperatures ranging from 20 ℃ to 150 ℃. These results suggest that the lateral β-Ga₂O₃ SBD has a tremendous potential for future power electronic applications.