Electrically-manipulable electron-momentum filter based on antiparallel asymmetric double δ-magnetic-barrier semiconductor microstructure

We theoretically investigate the wave-vector filtering (WVF) effect for electrons in an antiparallel asymmetric double δ-magnetic-barrier microstructure under a bias, which can be fabricated experimentally by patterning two asymmetric ferromagnetic (FM) stripes on the top and the bottom of GaAs/Al_xGa_1-xAs heterostructure, respectively. It is found that an appreciable WVF effect appears because of an essentially two-dimensional (2D) process for electrons across this microstructure. WVF effect is found to be sensitive to the applied bias. WVF efficiency can be tuned by changing bias, which may lead to an electrically-controllable momentum filter for nanoelectronics device applications.