Band alignment in SiC-based one-dimensional van der Waals homojunctions

The density functional theory method is utilized to verify the electronic structures of SiC nanotubes (SiCNTs) and SiC nanoribbons (SiCNRs) one-dimensional (1D) van der Waals homojunctions (vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of-0.3, -0.1 V/Å and0.1, 0.3 V/Å and change into metal when the electric field intensity is equal to or higher than 0.4 V/Å. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices.