Digital and analog memory devices based on 2D layered MPS₃ ( M=Mn, Co, Ni) materials

We demonstrate digital and analog devices with an Ag/MPS₃/Au structure based on layered MPS₃ (M=Mn, Co, Ni) 2D materials. All devices show the bipolar behavior of resistive switching. In addition, Ag/MnPS₃/Au and Ag/NiPS₃/Au devices show synaptic characteristics of potentiation and depression. The digital and analog characteristics of resistance states enable Ag/MPS₃/Au devices to work as both binary memory and artificial synapse devices. The Ag/MPS₃/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS₃ materials.