Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs

In order to investigate the characteristics and mechanisms of subthreshold voltage hysteresis (∆ V _{th, sub}) of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), 4H-SiC planar and trench MOSFETs and corresponding P-type planar and trench metal-oxide-semiconductor (MOS) capacitors are fabricated and characterized. Compared with planar MOSFEF, the trench MOSFET shows hardly larger ∆ V _{th, sub} in wide temperature range from 25 ^°C to 300 ^°C. When operating temperature range is from 25 ^°C to 300 ^°C, the off-state negative V _gs of planar and trench MOSFETs should be safely above -4 V and -2 V, respectively, to alleviate the effect of ∆ V _{th, sub} on the normal operation. With the help of P-type planar and trench MOS capacitors, it is confirmed that the obvious ∆ V _{th, sub} of 4H-SiC MOSFET originates from the high density of the hole interface traps between intrinsic Fermi energy level (E _i) and valence band (E _v). The maximum ∆ V _{th, sub} of trench MOSFET is about twelve times larger than that of planar MOSFET, owing to higher density of interface states (D _it) between E _i and E _v. These research results will be very helpful for the application of 4H-SiC MOSFET and the improvement of ∆ V _{th, sub} of 4H-SiC MOSFET, especially in 4H-SiC trench MOSFET.