Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In₂Se₃ thin films on mica

The growth of γ -In₂Se₃ thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ -In₂Se₃ is achieved at a relatively low growth temperature. An ultrathin β -In₂Se₃ buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystalline γ -In₂Se₃ at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ -In₂Se₃ thin films.