Cite this article:
Zhuang-Zhuang Li, Zi-Yang Yan, Jia-Qi Xu, Xiao-Han Zhang, Jing-Bo Fan, Ya Lin, Zhong-Qiang Wang. Flexible and degradable resistive switching memory fabricated with sodium alginateJ. Chin. Phys. B, 2021, 30(4): 047302.
| Zhuang-Zhuang Li, Zi-Yang Yan, Jia-Qi Xu, Xiao-Han Zhang, Jing-Bo Fan, Ya Lin, Zhong-Qiang Wang. Flexible and degradable resistive switching memory fabricated with sodium alginateJ. Chin. Phys. B, 2021, 30(4): 047302. |
Flexible and degradable resistive switching memory fabricated with sodium alginate
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Abstract
Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem, due to its physically vanishing ability in solution. Here in this work, we demonstrate a flexible and degradable transient resistive switching (RS) memory device with simple structure of Cu/sodium alginate (SA)/ITO. The device presents excellent RS characteristics as well as high flexibility, including low operating voltage (<1.5 V) and multilevel RS behavior. No performance degradation occurs after bending the device 50 times. Moreover, our device can be absolutely dissolved in deionized water. The proposed SA-based transient memory device has great potential for the development of green and security memory devices. -
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