Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga₂O₃ substrate

We report the edge-defined-film-fed (EFG)-grown β-Ga₂O₃-based Schottky photodiodes. The device has a reverse leakage current of ∼nA and a rectified ratio of ∼10⁴ at \(\mathrm\pm 5\) V. In addition, the photodiode detector shows a dark current of 0.3 pA, a photo-responsivity (R) of 2.875 mA/W, a special detectivity (D^*) of 10¹⁰ Jones, and an external quantum efficiency (EQE) of 1.4% at zero bias, illustrating a self-powered operation. This work may advance the development of the Ga₂O₃-based Schottky diode solar-blind photodetectors.