Cite this article:
Rui Liu, Yongli He, Shanshan Jiang, Li Zhu, Chunsheng Chen, Ying Zhu, Qing Wan. Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistorJ. Chin. Phys. B, 2021, 30(5): 058102.
| Rui Liu, Yongli He, Shanshan Jiang, Li Zhu, Chunsheng Chen, Ying Zhu, Qing Wan. Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistorJ. Chin. Phys. B, 2021, 30(5): 058102. |
Synaptic plasticity and classical conditioning mimicked in single indium-tungsten-oxide based neuromorphic transistor
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Abstract
Emulation of synaptic function by ionic/electronic hybrid device is crucial for brain-like computing and neuromorphic systems. Electric-double-layer (EDL) transistors with proton conducting electrolytes as the gate dielectrics provide a prospective approach for such application. Here, artificial synapses based on indium-tungsten-oxide (IWO)-based EDL transistors are proposed, and some important synaptic functions (excitatory post-synaptic current, paired-pulse facilitation, filtering) are emulated. Two types of spike-timing-dependent plasticity (Hebbian STDP and anti-Hebbian STDP) learning rules and multistore memory (sensory memory, short-term memory, and long-term memory) are also mimicked. At last, classical conditioning is successfully demonstrated. Our results indicate that IWO-based neuromorphic transistors are interesting for neuromorphic applications. -
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