Cite this article:
Jie Li, Li-Qiang Che, Tian Le, Jia-Hao Zhang, Pei-Jie Sun, Toshiro Takabatake, Xin Lu. Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10 (T=Ru and Os)J. Chin. Phys. B, 2020, 29(7): 077103.
| Jie Li, Li-Qiang Che, Tian Le, Jia-Hao Zhang, Pei-Jie Sun, Toshiro Takabatake, Xin Lu. Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10 (T=Ru and Os)J. Chin. Phys. B, 2020, 29(7): 077103. |
Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10 (T=Ru and Os)
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Abstract
We have carried out point-contact spectroscopy (PCS) measurements on one family of antiferromagnetic Kondo semiconductor CeT2Al10 (T=Ru and Os) with a Néel temperature TN ~27.5 and 28.5 K, respectively. Their PCS conductance curves both exhibit a characteristic coherent double-peak-structure at temperatures below TN, signaling an AFM gap around the Fermi surface. The temperature dependent AFM gap △1 follows a Bardeen-Cooper-Schrieffer (BCS)-like mean-field behavior with a moderate gap anisotropy for PCS along different crystal axes. Another asymmetric gap-like feature is observed for both compounds at temperatures far below TN, which is consistent with opening of a new hybridization gap △h inside the long-range ordered AFM state. Our results suggest a common itinerant nature of the anomalous AFM ordering, constraining theoretical models to explain the AFM origin in CeRu2Al10 and CeOs2Al10. -
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