Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures

We report a tunable transverse magnetoresistance of the planar Hall effect (PHE), up to 48% in the Ni₈₀Fe₂₀/HfO₂ heterostructures. This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage, which exhibits a gate-dependent PHE. Moreover, in the range of 0-V to 1-V gate voltage, transverse magnetoresistance of PHE can be continuously regulated. Ferromagnetic resonance (FMR) also demonstrates the shift of the resonance field at low gate voltage. This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.