Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Gallium oxide (Ga₂O₃), a typical ultra wide bandgap semiconductor, with a bandgap of~4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga₂O₃ in power devices has been aroused. Many researches have verified that Ga₂O₃ is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga₂O₃, which may provide a guideline for Ga₂O₃ to be preferably used in power devices fabrication.