Photoluminescence in fluorescent 4H-SiC single crystal adjusted by B, Al, and N ternary dopants

This paper reports the sensitive effect of photoluminescence peak intensity and transmittance affected by B, Al, and N dopants in fluorescent 4H-SiC single crystals. The crystalline type, doping concentration, photoluminescence spectra, and transmission spectra were characterized at room temperature. It is found that the doped 4H-SiC single crystal emits a warm white light covering a wide range from 460 nm to 720 nm, and the transmittance increases from ~10% to ~60% with the fluctuation of B, Al, and N ternary dopants. With a parameter of C_D-A, defined by B, Al, and N concentration, the photoluminescence and transmittance properties can be adjusted by optimal doping regulation.